전남대학교 중앙도서관

1.7-kV Vertical GaN p-n Diodes with Step-Graded Ion-Implanted Edge Termination

회의자료

issue: 2023 Device Research Conference (DRC) 2023 Device Research Conference (DRC), 2023. :1-2 Jun, 2023
Author: Duan, Yu
Xie, Andy
Fay, Patrick
DB Label: Database : IEEE Xplore Digital Library

Tu4E-4 Multi-channel Schottky-gate BRIDGE HEMT Technology for Millimeter-Wave Power Amplifier Applications

회의자료

issue: 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022 International Microwave Symposium - IMS 2022, 2022 IEEE/MTT-S. :298-301 Jun, 2022
Author: Shinohara, Keisuke
King, Casey
Regan, Dean
Regan, Eric
Carter, Andrew
Arias, Andrea
Bergman, Joshua
Urteaga, Miguel
Brar, Berinder
Cao, Yu
Xie, Andy
Beam, Edward
Lee, Cathy
DB Label: Database : IEEE Xplore Digital Library

A baseband-65GHz High Linearity-Bandwidth GaN LNA using a 1.7A/mm High Current Density ScAlN based GaN HEMT Technology

회의자료

issue: 2021 IEEE MTT-S International Microwave Symposium (IMS) Microwave Symposium (IMS), 2021 IEEE MTT-S International. :772-775 Jun, 2021
Author: Kobayashi, Kevin W.
Kumar, Vipan
Xie, Andy
Jimenez, Jose L.
Beam, Ed
Ketterson, Andrew
DB Label: Database : IEEE Xplore Digital Library

Sensitivity Analysis on Transferred Neural Architectures of BERT and GPT-2 for Financial Sentiment Analysis

보고서

First Demonstration of Vertical Superjunction Diode in GaN

회의자료

issue: 2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :35.6.1-35.6.4 Dec, 2022
Author: Xiao, Ming
Ma, Yunwei
Du, Zhonghao
Qin, Yuan
Liu, Kai
Cheng, Kai
Udrea, Florin
Xie, Andy
Beam, Edward
Wang, Boyan
Spencer, Joseph
Tadjer, Marko
Anderson, Travis
Wang, Han
Zhang, Yuhao
DB Label: Database : IEEE Xplore Digital Library

Ferroelectric-Gated GaN HEMTs for RF and mm-Wave Switch Applications

회의자료

issue: 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) VLSI Technology, Systems and Applications (VLSI-TSA), 2022 International Symposium on. :1-2 Apr, 2022
Author: Ye, Hansheng
Wu, Chunlei
Venkatesan, Nivedhita
Wang, Jingshan
Cao, Yu
Xie, Andy
Beam, Edward
Fay, Patrick
DB Label: Database : IEEE Xplore Digital Library

NoFADE: Analyzing Diminishing Returns on CO2 Investment

보고서

Author: Fu, Andre
Tran, Justin
Xie, Andy
Spraggett, Jonathan
Ding, Elisa
Lee, Chang-Won
Singla, Kanav
Hosseini, Mahdi S.
Plataniotis, Konstantinos N.
DB Label: Database : arXiv

High Performance GaN-on-Si Power Devices with Ultralow Specific On-resistance Using Novel Strain Method Fabricated on 200 mm CMOS-Compatible Process Platform

회의자료

issue: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2019 31st International Symposium on. :67-70 May, 2019
Author: Wong, Roy K.-Y.
Chiu, H. C.
Zhang, J. H.
Zhou, C.
Zhao, Thomas
Wu, Y. B.
Liao, Henry
He, Simon
Zhang, A. B.
Zou, Y.B.
Li, Seiya
Zhang, Martin
Wu, Macro
Lee, John
Chen, P.W.
Xie, Andy
Zhang, Jeff
DB Label: Database : IEEE Xplore Digital Library

Monolithically Integrated Self-Biased Circulator for mmWave T/R MMIC Applications

회의자료

issue: 2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :4.2.1-4.2.4 Dec, 2021
Author: Cui, Yongjie
Chen, Hung-Yu
Chen, Shuoqi
Linkhart, Douglas
Tan, Haosen
Wu, Jiangbin
Yoon, Soack
Geiler, Michael
Geiler, Anton
Beam, Edward
Xie, Andy
Wang, Nan
Regan, Michael
Kruzich, Mark
Nguyen, Bruce
White, Donald
Ketterson, Andrew
Lee, Cathy
Willis, David
Wang, Han
Cao, Yu
DB Label: Database : IEEE Xplore Digital Library

1.7-kV vertical GaN p-n diode with triple-zone graded junction termination extension formed by ion-implantation

학술저널

issue: In e-Prime - Advances in Electrical Engineering, Electronics and Energy December 2023 6
Author: Duan, Yu
Wang, Jingshan
Xie, Andy
Zhu, Zhongtao
Fay, Patrick
DB Label: Database : ScienceDirect

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