전남대학교 중앙도서관

NVDRAM: A 32Gb Dual Layer 3D Stacked Non-volatile Ferroelectric Memory with Near-DRAM Performance for Demanding AI Workloads

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issue: 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023
Author: Ramaswamy, N.
Calderoni, A.
Zahurak, J.
Servalli, G.
Chavan, A.
Chhajed, S.
Balakrishnan, M.
Fischer, M.
Hollander, M.
Ettisserry, D. P.
Liao, A.
Karda, K.
Jerry, M.
Mariani, M.
Visconti, A.
Cook, B. R.
Cook, B. D.
Mills, D.
Torsi, A.
Mouli, C.
Byers, E.
Helm, M.
Pawlowski, S.
Shiratake, S.
Chandrasekaran, N.
DB Label: Database : IEEE Xplore Digital Library

Optimizing dynamic-threshold DTMOS device performance in an SOI embedded DRAM technology

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issue: Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488) University/government/industry microelectronics symposium University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial. :292-294 2003
Author: Burke, F.
Kim, C.S.
Rambhatla, A.
Zhao, Y.
Zahurak, J.
Parke, S.
DB Label: Database : IEEE Xplore Digital Library

Effect of high field electron transport characteristics on transistor performance in InGaAs/InAlAs heterostructures

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issue: Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Advanced concepts in high speed semiconductor devices and circuits High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in. :270-278 1993
Author: Zahurak, J.
Iliadis, A.A.
Rishton, S.A.
Masselink, W.T.
DB Label: Database : IEEE Xplore Digital Library

Source/drain optimization of the dynamic-threshold DTMOS device in a 0.15 /spl mu/m SOI embedded DRAM technology

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issue: Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488) University/government/industry microelectronics symposium University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial. :336-337 2003
Author: Burke, F.
Rambhatla, A.
Zahurak, J.
Parke, S.
DB Label: Database : IEEE Xplore Digital Library

0.15 /spl mu/m SOI DRAM technology incorporating sub-volt dynamic threshold devices for embedded mixed-signal & RF circuits

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issue: 2001 IEEE International SOI Conference. Proceedings (Cat. No.01CH37207) SOI conference SOI Conference, 2001 IEEE International. :97-98 2001
Author: Goldman, D.
DeGregorio, K.
Kim, C.S.
Nielson, M.
Zahurak, J.
Parke, S.
DB Label: Database : IEEE Xplore Digital Library

Lateral diffusion effects in AuGe based source-drain contacts to AllnAs/InGaAs/InP doped channel MODFETs

학술저널

원문보기: Full Text (Springer) 조회 - Impact Factor (JCR) 등재 - Web of Science (SCIE) 등재 - SCOPUS 원문복사신청 - FRIC 원문복사신청 - RISS

AlInAs/InGaAs SUPERLATTICE CHANNEL HETEROJUNCTION FET WITH HIGH POSITIVE-NEGATIVE TRANSCONDUCTANCE PEAKS.

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issue: Physics of Semiconductors - Proceedings of the 20th International Conference (In 3 Volumes); 1990, p1713-1716, 4p
Author: ILIADIS, A. A.
ZAHURAK., J.
SIVCO, D. L.
CHO, A. Y.
DB Label: Database : Complementary Index

HIGH TRANSCONDUCTANCE ALLNAS/INGAAS SUPERLATTICE CHANNEL HETEROJUNCTION FET

학술저널

원문보기: 조회 - Impact Factor (JCR) 등재 - Web of Science 등재 - SCOPUS 원문복사신청 - FRIC

Source/drain optimization of the dynamic-threshold DTMOS device in a 0.15 μm SOI embedded DRAM technology.

회의자료

issue: Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488); 2003, p336-337, 2p
Author: Burke, F.
Rambhatla, A.
Zahurak, J.
Parke, S.
DB Label: Database : Complementary Index

0.15 μm SOI DRAM technology incorporating sub-volt dynamic threshold devices for embedded mixed-signal & RF circuits.

회의자료

issue: 2001 IEEE International SOI Conference. Proceedings (Cat. No.01CH37207); 2001, p97-98, 2p
Author: Goldman, D.
DeGregorio, K.
Kim, C.S.
Nielson, M.
Zahurak, J.
Parke, S.
DB Label: Database : Complementary Index

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