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전체선택

6.6W/mm 200mm CMOS compatible AlN/GaN/Si MIS-HEMT with in-situ SiN gate dielectric and low temperature ohmic contacts

회의자료

issue: 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023
Author: Morvan, E.
Gobil, Y.
Morisot, F.
Biscarat, J.
Charles, M.
Lugo, J.
Divay, A.
Medbouhi, M.
Charlet, I.
Delprato, J.
Scheiblin, P.
Rrustemi, B.
Giry, A.
Serhan, A.
Ruel, S.
Pimenta-Barros, P.
Laulagnet, F.
Minoret, S.
Anotta, A.
Billon, T.
Duriez, B.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE)

Impact of Gate Morphology on Electrical Performances of Recessed GaN-on Si MOS channel-HEMT for Different Channel Orientations

회의자료

issue: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2023 35th International Symposium on. :382-385 May, 2023
Author: Piotrowic, C.
Mohamad, B.
Rocha, P. Fernandes Paes Pinto
Malbert, N.
Ruel, S.
Pimenta-Barros, P.
Jaud, M.-A.
Vauche, L.
Royer, C. Le
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE)

Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits of the Fully Recessed Gate Architecture

회의자료

issue: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on. :49-52 May, 2022
Author: Le Royer, C.
Mohamad, B.
Biscarrat, J.
Vauche, L.
Escoffier, R.
Buckley, J.
Becu, S.
Riat, R.
Gillot, C.
Charles, M.
Ruel, S.
Pimenta-Barros, P.
Posseme, N.
Besson, P.
Boudaa, F.
Vannuffel, C.
Vandendaele, W.
Viey, A.G.
Krakovinsky, A.
Jaud, M.-A.
Modica, R.
Iucolano, F.
Tiec, R. Le
Levi, S.
Orsatelli, M.
Gwoziecki, R.
Sousa, V.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE)

Family Spirituality and Its Influence on the Priestly Vocation of Diocesan Seminarians, Philippines

학술저널

issue: 48 Technium Soc. Sci. J. 61 (2023) / Technium Social Sciences Journal, Vol. 48, Issue 1 (October 2023), pp. 61-81
Author: Cordova, Romelle S.
Jundos, Ruel S.
DB Label: Database : HeinOnline

원문보기: Full Text (HeinOnline) Full Text (HeinOnline)

Impact of the recessed gate depth on the GaN metal-oxide-semiconductor high electron mobility transistor performances: New insights on mobility extraction.

학술저널

issue: Journal of Applied Physics; 5/7/2024, Vol. 135 Issue 17, p1-11, 11p
Author: Piotrowicz, C.
Mohamad, B.
Malbert, N.
Bécu, S.
Ruel, S.
Le Royer, C.
DB Label: Database : Complementary Index

원문보기: Full Text (AIP) 조회 - Impact Factor (JCR) 등재 - SCOPUS

Target Localization from 3D data for On-Orbit Autonomous Rendezvous & Docking

회의자료

issue: 2008 IEEE Aerospace Conference Aerospace Conference, 2008 IEEE. :1-11 Mar, 2008
Author: Ruel, S.
Luu, T.
Anctil, M.
Gagnon, S.
DB Label: Database : IEEE Xplore Digital Library