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CMOS Demonstration of Negative Capacitance HfO2-ZrO2 Superlattice Gate Stack in a Self-Aligned, Replacement Gate Process

회의자료

issue: 2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :34.3.1-34.3.4 Dec, 2022
Author: Shanker, N.
Cook, M.
Cheema, S.S.
Li, W.
Rastogi, R.
Pipitone, D.
Chen, C.
Smith, M.
Meninger, S.
Bauer, F.
Pinelli, G.
Hunt, J.
Salahuddin, S.
Mohamed, M.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE)

Abstract No. 130: In-vitro assessment of a protein foam drug delivery system

학술저널

issue: In Journal of Vascular and Interventional Radiology 2010 21(2) Supplement:S51-S51
Author: Pipitone, D.
McCrate, M.E.
Shiels, W.E.
DB Label: Database : ScienceDirect

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Ultrathin ferroic HfO 2 -ZrO 2 superlattice gate stack for advanced transistors.

학술저널

issue: Nature [Nature] 2022 Apr; Vol. 604 (7904), pp. 65-71. Date of Electronic Publication: 2022 Apr 06.
Author: Cheema SS; Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, USA. s.cheema@berkeley.edu.
Shanker N; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA.
Wang LC; Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, USA.
Hsu CH; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA.
Hsu SL; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA.
Liao YH; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA.
San Jose M; Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA.
Gomez J; Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA.
Chakraborty W; Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA.
Li W; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA.
Bae JH; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA.
Volkman SK; Applied Science and Technology, University of California, Berkeley, CA, USA.
Kwon D; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA.
Rho Y; Laser Thermal Laboratory, Department of Mechanical Engineering, University of California, Berkeley, CA, USA.
Pinelli G; Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA.
Rastogi R; Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA.
Pipitone D; Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA.
Stull C; Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA.
Cook M; Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA.
Tyrrell B; Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA.
Stoica VA; Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, USA.
Zhang Z; Advanced Photon Source, Argonne National Laboratory, Lemont, IL, USA.
Freeland JW; Advanced Photon Source, Argonne National Laboratory, Lemont, IL, USA.
Tassone CJ; Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA, USA.
Mehta A; Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA, USA.
Saheli G; Applied Materials, Santa Clara, CA, USA.
Thompson D; Applied Materials, Santa Clara, CA, USA.
Suh DI; Research & Development Division, SK hynix, Icheon, Korea.
Koo WT; Research & Development Division, SK hynix, Icheon, Korea.
Nam KJ; Semiconductor R&D Center, Samsung Electronics, Gyeonggi-do, Korea.
Jung DJ; Semiconductor R&D Center, Samsung Electronics, Gyeonggi-do, Korea.
Song WB; Semiconductor R&D Center, Samsung Electronics, Gyeonggi-do, Korea.
Lin CH; Logic Technology Development, Intel Corporation, Hillsboro, OR, USA.
Nam S; Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, Korea.
Heo J; Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, Korea.
Parihar N; Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, India.
Grigoropoulos CP; Laser Thermal Laboratory, Department of Mechanical Engineering, University of California, Berkeley, CA, USA.
Shafer P; Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
Fay P; Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA.
Ramesh R; Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, USA.; Department of Physics, University of California, Berkeley, Berkeley, CA, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
Mahapatra S; Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, India.
Ciston J; National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
Datta S; Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA.
Mohamed M; Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA.
Hu C; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA.
Salahuddin S; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA. sayeef@berkeley.edu.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA. sayeef@berkeley.edu.
DB Label: Database : MEDLINE

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