전남대학교 중앙도서관

A 14 nm Embedded STT-MRAM CMOS Technology

회의자료

issue: 2020 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2020 IEEE International. :11.5.1-11.5.4 Dec, 2020
Author: Edelstein, D.
Rizzolo, M.
Sil, D.
Dutta, A.
DeBrosse, J.
Wordeman, M.
Arceo, A.
Chu, I. C.
Demarest, J.
Edwards, E. R. J.
Evarts, E. R.
Fullam, J.
Gasasira, A.
Hu, G.
Iwatake, M.
Johnson, R.
Katragadda, V.
Levin, T.
Li, J.
Liu, Y.
Long, C.
Maffitt, T.
McDermott, S.
Mehta, S.
Mehta, V.
Metzler, D.
Morillo, J.
Nakamura, Y.
Nguyen, S.
Nieves, P.
Pai, V.
Patlolla, R.
Pujari, R.
Southwick, R.
Standaert, T.
van der Straten, O.
Wu, H.
Yang, C.-C.
Houssameddine, D.
Slaughter, J. M.
Worledge, D. C.
DB Label: Database : IEEE Xplore Digital Library

A 256-Mcell Phase-Change Memory Chip Operating at $2{+}$ Bit/Cell

학술저널

issue: IEEE Transactions on Circuits and Systems I: Regular Papers IEEE Trans. Circuits Syst. I Circuits and Systems I: Regular Papers, IEEE Transactions on. 60(6):1521-1533 Jun, 2013
Author: Close, G. F.
Frey, U.
Morrish, J.
Jordan, R.
Lewis, S.
Maffitt, T.
BrightSky, M.
Hagleitner, C.
Lam, C.
Eleftheriou, E.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE) 등재 - Web of Science (SCIE) 등재 - SCOPUS 조회 - Impact Factor (JCR)

A 16Mb MRAM featuring bootstrapped write drivers

회의자료

issue: 2004 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.04CH37525) VLSI circuits VLSI Circuits, 2004. Digest of Technical Papers. 2004 Symposium on. :454-457 2004
Author: DeBrosse, J.
Arndt, C.
Barwin, C.
Bette, A.
Gogl, D.
Gow, E.
Hoenigschmid, H.
Lammers, S.
Lamorey, M.
Lu, Y.
Maffitt, T.
Maloney, K.
Obermeyer, W.
Sturm, A.
Viehmann, H.
Willmott, D.
Wood, M.
Gallagher, W.J.
Mueller, G.
Sitaram, A.R.
DB Label: Database : IEEE Xplore Digital Library

A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology

학술저널

issue: IEEE Transactions on Magnetics IEEE Trans. Magn. Magnetics, IEEE Transactions on. 46(6):2322-2327 Jun, 2010
Author: Min, T.
Chen, Q.
Beach, R.
Jan, G.
Horng, C.
Kula, W.
Torng, T.
Tong, R.
Zhong, T.
Tang, D.
Wang, P.
Chen, M.
Sun, J. Z.
Debrosse, J. K.
Worledge, D. C.
Maffitt, T. M.
Gallagher, W. J.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE) 등재 - Web of Science (SCIE) 등재 - SCOPUS 조회 - Impact Factor (JCR)

A 16-Mb MRAM featuring bootstrapped write drivers

학술저널

issue: IEEE Journal of Solid-State Circuits IEEE J. Solid-State Circuits Solid-State Circuits, IEEE Journal of. 40(4):902-908 Apr, 2005
Author: Gogl, D.
Arndt, C.
Barwin, J.C.
Bette, A.
DeBrosse, J.
Gow, E.
Hoenigschmid, H.
Lammers, S.
Lamorey, M.
Yu Lu
Maffitt, T.
Maloney, K.
Obermaier, W.
Sturm, A.
Viehmann, H.
Willmott, D.
Wood, M.
Gallagher, W.J.
Mueller, G.
Sitaram, A.R.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE) 등재 - Web of Science (SCIE) 등재 - SCOPUS 조회 - Impact Factor (JCR) 원문복사신청 - FRIC

A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)

회의자료

issue: 2008 IEEE International Electron Devices Meeting Electron Devices Meeting, 2008. IEDM 2008. IEEE International. :1-4 Dec, 2008
Author: Beach, R.
Min, T.
Horng, C.
Chen, Q.
Sherman, P.
Le, S.
Young, S.
Yang, K.
Yu, H.
Lu, X.
Kula, W.
Zhong, T.
Xiao, R.
Zhong, A.
Liu, G.
Kan, J.
Yuan, J.
Chen, J.
Tong, R.
Chien, J.
Torng, T.
Tang, D.
Wang, P.
Chen, M.
Assefa, S.
Qazi, M.
DeBrosse, J.
Gaidis, M.
Kanakasabapathy, S.
Lu, Y.
Nowak, J.
O'Sullivan, E.
Maffitt, T.
Sun, J.Z.
Gallagher, W.J.
DB Label: Database : IEEE Xplore Digital Library

Demonstration of chip level writability, endurance and data retention of an entire 8Mb STT-MRAM array

회의자료

issue: 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on. :1-2 Apr, 2013
Author: Lee, Y. J.
Jan, G.
Wang, Y. J.
Pi, K.
Zhong, T.
Tong, R. Y.
Lam, V.
Teng, J.
Huang, K.
He, R. R.
Le, S.
Torng, T.
DeBrosse, J.
Maffitt, T.
Long, C.
Gallagher, W. J.
Wang, P. K.
DB Label: Database : IEEE Xplore Digital Library

A 512Mb phase-change memory (PCM) in 90nm CMOS achieving 2b/cell

회의자료

issue: 2011 Symposium on VLSI Circuits - Digest of Technical Papers VLSI Circuits (VLSIC), 2011 Symposium on. :202-203 Jun, 2011
Author: Close, G. F.
Frey, U.
Morrish, J.
Jordan, R.
Lewis, S.
Maffitt, T.
Breitwisch, M.
Hagleitner, C.
Lam, C.
Eleftheriou, E.
DB Label: Database : IEEE Xplore Digital Library

A 256K SRAM with on-chip power supply conversion

회의자료

issue: 1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International. XXX:252-253 1987
Author: Roberts, A.
Dreibelbis, J.
Braceras, G.
Gabric, J.
Gilbert, L.
Goodwin, R.
Hedberg, E.
Maffitt, T.
Meuniar, L.
Moran, D.
Phuong Nguyen
Reed, D.
Reismiller, D.
Sasaki, R.
DB Label: Database : IEEE Xplore Digital Library