전남대학교 중앙도서관

Growth Optimization and Device Integration of Narrow-Bandgap Graphene Nanoribbons.

학술저널

issue: Small (Weinheim an der Bergstrasse, Germany) [Small] 2022 Aug; Vol. 18 (31), pp. e2202301. Date of Electronic Publication: 2022 Jun 17.
Author: Borin Barin G; Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland.
Sun Q; Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland.
Di Giovannantonio M; Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland.
Du CZ; State Key Laboratory of Elemento-Organic Chemistry, College of Chemistry, Nankai University, Tianjin, 300071, China.
Wang XY; State Key Laboratory of Elemento-Organic Chemistry, College of Chemistry, Nankai University, Tianjin, 300071, China.
Llinas JP; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.
Mutlu Z; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.
Lin Y; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.
Wilhelm J; Institute of Theoretical Physics, University of Regensburg, D-93053, Regensburg, Germany.
Overbeck J; Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland.
Daniels C; Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA.
Lamparski M; Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA.
Sahabudeen H; Center for Advancing Electronics Dresden, Department of Chemistry and Food Chemistry, TU Dresden, 01062, Dresden, Germany.
Perrin ML; Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland.
Urgel JI; Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland.
Mishra S; Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland.
Kinikar A; Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland.
Widmer R; Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland.
Stolz S; Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland.
Bommert M; Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland.
Pignedoli C; Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland.
Feng X; Center for Advancing Electronics Dresden, Department of Chemistry and Food Chemistry, TU Dresden, 01062, Dresden, Germany.
Calame M; Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland.
Müllen K; Max Planck Institute for Polymer Research, 55128, Mainz, Germany.; Department of Chemistry, Johannes Gutenberg-Universität Mainz, 55128, Mainz, Germany.
Narita A; Max Planck Institute for Polymer Research, 55128, Mainz, Germany.; Organic and Carbon Nanomaterials Unit, Okinawa Institute of Science and Technology Graduate University, 1919-1 Tancha, Onna-son, Okinawa, 904-0495, Japan.
Meunier V; Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA.
Bokor J; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.
Fasel R; Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland.; Department of Chemistry, Biochemistry and Pharmaceutical Sciences, University of Bern, Bern, 3012, Switzerland.
Ruffieux P; Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland.
DB Label: Database : MEDLINE

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Transfer-Free Synthesis of Atomically Precise Graphene Nanoribbons on Insulating Substrates.

학술저널

issue: ACS nano [ACS Nano] 2021 Feb 23; Vol. 15 (2), pp. 2635-2642. Date of Electronic Publication: 2021 Jan 25.
Author: Mutlu Z; Department of Electrical Engineering and Computer Sciences, UC Berkeley, Berkeley, California 94720, United States.; The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.
Llinas JP; Department of Electrical Engineering and Computer Sciences, UC Berkeley, Berkeley, California 94720, United States.; The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.
Jacobse PH; Department of Physics, UC Berkeley, Berkeley, California 94720, United States.
Piskun I; Department of Chemistry, UC Berkeley, Berkeley, California 94720, United States.
Blackwell R; Department of Chemistry, UC Berkeley, Berkeley, California 94720, United States.
Crommie MF; Department of Physics, UC Berkeley, Berkeley, California 94720, United States.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.; Kavli Energy NanoSciences Institute at the University of California Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.
Fischer FR; Department of Chemistry, UC Berkeley, Berkeley, California 94720, United States.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.; Kavli Energy NanoSciences Institute at the University of California Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.
Bokor J; Department of Electrical Engineering and Computer Sciences, UC Berkeley, Berkeley, California 94720, United States.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.
DB Label: Database : MEDLINE

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Low-Temperature Side Contact to Carbon Nanotube Transistors: Resistance Distributions Down to 10 nm Contact Length.

학술저널

issue: Nano letters [Nano Lett] 2019 Feb 13; Vol. 19 (2), pp. 1083-1089. Date of Electronic Publication: 2019 Jan 31.
Author: Pitner G
Hills G
Llinas JP; Department of Electrical Engineering and Computer Sciences , University of California , Berkeley , California 94720 , United States.
Persson KM
Park R
Bokor J; Department of Electrical Engineering and Computer Sciences , University of California , Berkeley , California 94720 , United States.
Mitra S
Wong HP
DB Label: Database : MEDLINE

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Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons.

학술저널

issue: Nature communications [Nat Commun] 2017 Sep 21; Vol. 8 (1), pp. 633. Date of Electronic Publication: 2017 Sep 21.
Author: Llinas JP; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
Fairbrother A; Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, Dübendorf, CH-8600, Switzerland.
Borin Barin G; Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, Dübendorf, CH-8600, Switzerland.
Shi W; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.; Department of Physics, UC Berkeley, Berkeley, CA, 94720, USA.
Lee K; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
Wu S; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
Yong Choi B; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.; Flash PA Team, Semiconductor Memory Business, Samsung Electronics Co. Ltd., Gyeonggi-do, Korea.
Braganza R; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
Lear J; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.
Kau N; Department of Physics, UC Berkeley, Berkeley, CA, 94720, USA.
Choi W; Department of Physics, UC Berkeley, Berkeley, CA, 94720, USA.
Chen C; Department of Physics, UC Berkeley, Berkeley, CA, 94720, USA.
Pedramrazi Z; Department of Physics, UC Berkeley, Berkeley, CA, 94720, USA.
Dumslaff T; Max Planck Institute for Polymer Research, Ackermannweg 10, Mainz, 55128, Germany.
Narita A; Max Planck Institute for Polymer Research, Ackermannweg 10, Mainz, 55128, Germany.
Feng X; Center for Advancing Electronics Dresden, Department of Chemistry and Food Chemistry, TU Dresden, Mommsenstrasse 4, Dresden, 01062, Germany.
Müllen K; Max Planck Institute for Polymer Research, Ackermannweg 10, Mainz, 55128, Germany.
Fischer F; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.; Department of Chemistry, UC Berkeley, Berkeley, CA, 94720, USA.; Kavli Energy NanoSciences Institute at the University of California, Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
Zettl A; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.; Department of Physics, UC Berkeley, Berkeley, CA, 94720, USA.; Kavli Energy NanoSciences Institute at the University of California, Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
Ruffieux P; Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, Dübendorf, CH-8600, Switzerland.
Yablonovitch E; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.; Kavli Energy NanoSciences Institute at the University of California, Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
Crommie M; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.; Department of Physics, UC Berkeley, Berkeley, CA, 94720, USA.; Kavli Energy NanoSciences Institute at the University of California, Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
Fasel R; Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, Dübendorf, CH-8600, Switzerland.; Department of Chemistry and Biochemistry, University of Bern, Freiestrasse 3, CH-3012, Bern, Switzerland.
Bokor J; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA. jbokor@eecs.berkeley.edu.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA. jbokor@eecs.berkeley.edu.
DB Label: Database : MEDLINE

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MoS2 transistors with 1-nanometer gate lengths.

학술저널

issue: Science (New York, N.Y.) [Science] 2016 Oct 07; Vol. 354 (6308), pp. 99-102. Date of Electronic Publication: 2016 Oct 06.
Author: Desai SB; Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.; Berkeley Sensor and Actuator Center, University of California, Berkeley, CA 94720, USA.
Madhvapathy SR; Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
Sachid AB; Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
Llinas JP; Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
Wang Q; Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, USA.
Ahn GH; Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
Pitner G; Electrical Engineering, Stanford University, Stanford, CA 94305, USA.
Kim MJ; Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, USA.
Bokor J; Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
Hu C; Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA.
Wong HP; Electrical Engineering, Stanford University, Stanford, CA 94305, USA.
Javey A; Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA. ajavey@eecs.berkeley.edu.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.; Berkeley Sensor and Actuator Center, University of California, Berkeley, CA 94720, USA.
DB Label: Database : MEDLINE

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