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2
A Program Disturb Model and Channel Leakage Current Study for Sub-20 nm nand Flash Cells 미리보기

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issue
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 58(1):11-16 Jan, 2011
Author
Torsi, A.
Zhao, Y.
Liu, H.
Tanzawa, T.
Goda, A.
Kalavade, P.
Parat, K.
DB Label
Database : IEEE Xplore Digital Library
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Full Text (IEEE)  등재 - Web of Science (SCIE)  등재 - SCOPUS  조회 - Impact Factor (JCR) 
3
3-D ICs: Motivation, performance analysis, and technology 미리보기

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issue
Proceedings of the 26th European Solid-State Circuits Conference Solid-State Circuits Conference, 2000. ESSCIRC '00. Proceedings of the 26rd European. :406-414 2000
Author
Saraswat, K.C.
Banerjee, K.
Joshi, A.R.
Kalavade, P.
Kapur, P.
Souri, S.J.
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Database : IEEE Xplore Digital Library
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4
A Low-Power, Highly Scalable, Vertical Double-Gate MOSFET Using Novel Processes 미리보기

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issue
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 55(2):632-639 Feb, 2008
Author
Cho, H.
Kapur, P.
Kalavade, P.
Saraswat, K. C.
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Database : IEEE Xplore Digital Library
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Full Text (IEEE)  등재 - Web of Science (SCIE)  등재 - SCOPUS  조회 - Impact Factor (JCR)  원문복사신청 - FRIC 
5
A Novel Spacer Process for Sub-10-nm-Thick Vertical MOS and Its Integration With Planar MOS Device 미리보기

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issue
IEEE Transactions on Nanotechnology IEEE Trans. Nanotechnology Nanotechnology, IEEE Transactions on. 5(5):554-563 Sep, 2006
Author
Cho, H.
Kapur, P.
Kalavade, P.
Saraswat, K.C.
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Database : IEEE Xplore Digital Library
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Full Text (IEEE)  등재 - Web of Science (SCIE)  등재 - SCOPUS  조회 - Impact Factor (JCR) 
6
Flash EEPROM threshold instabilities due to charge trapping during program/erase cycling 미리보기

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issue
IEEE Transactions on Device and Materials Reliability IEEE Trans. Device Mater. Relib. Device and Materials Reliability, IEEE Transactions on. 4(3):335-344 Sep, 2004
Author
Mielke, N.
Belgal, H.
Kalastirsky, I.
Kalavade, P.
Kurtz, A.
Qingru Meng
Righos, N.
Jie Wu
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Database : IEEE Xplore Digital Library
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7
Extreme Short-Channel Effect on RTS and Inverse Scaling Behavior: Source–Drain Implantation Effect in 25-nm nand Flash Memory 미리보기

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issue
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 32(9):1185-1187 Sep, 2011
Author
Kim, T.
Franklin, N.
Srinivasan, C.
Kalavade, P.
Goda, A.
DB Label
Database : IEEE Xplore Digital Library
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Full Text (IEEE)  등재 - Web of Science (SCIE)  등재 - SCOPUS  조회 - Impact Factor (JCR) 
8
Improved film growth and flatband voltage control of ALD HfO/sub 2/ and Hf-Al-O with n/sup +/ poly-Si gates using chemical oxides and optimized post-annealing 미리보기

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issue
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) VLSI technology VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on. :88-89 2002
Author
Wilk, G.D.
Green, M.L.
Ho, M.-Y.
Busch, B.W.
Sorsch, T.W.
Klemens, F.P.
Brijs, B.
van Dover, R.B.
Kornblit, A.
Gustafsson, T.
Garfunkel, E.
Hillenius, S.
Monroe, D.
Kalavade, P.
Hergenrother, J.M.
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Database : IEEE Xplore Digital Library
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9
Lateral gate-all-around (GAA) poly-Si transistors 미리보기

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issue
2001 IEEE International SOI Conference. Proceedings (Cat. No.01CH37207) SOI conference SOI Conference, 2001 IEEE International. :109-110 2001
Author
Kalavade, P.
Saraswat, K.C.
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Database : IEEE Xplore Digital Library
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10
A novel sub-10 nm transistor 미리보기

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issue
58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) Device research Device Research Conference, 2000. Conference Digest. 58th DRC. :71-72 2000
Author
Kalavade, P.
Saraswat, K.C.
DB Label
Database : IEEE Xplore Digital Library
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