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전체선택

Charge-based Sense Demonstration in 1T-1C HZO FeRAM Arrays to Overcome CBL-induced Bank Size Limitations

회의자료

issue: 2024 IEEE International Memory Workshop (IMW) Memory Workshop (IMW), 2024 IEEE International. :1-4 May, 2024
Author: Billoint, O.
Martin, S.
Laguerre, J.
Hosier, L.
Coignus, J.
Carabasse, C.
Andrieu, F.
Grenouillet, L.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE)

Data Retention Insights from Joint Analysis on BEOL-Integrated HZO-Based Scaled FeCAPs and 16kbit 1T-1C FeRAM Arrays

회의자료

issue: 2024 IEEE International Reliability Physics Symposium (IRPS) International Reliability Physics Symposium (IRPS), 2024 IEEE. :1-7 Apr, 2024
Author: Laguerre, J.
Martin, S.
Coignus, J.
Carabasse, C.
Bocquet, M.
Andrieu, F.
Grenouillet, L.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE)

Hybrid FeRAM/RRAM Synaptic Circuit Enabling On-Chip Inference and Learning at the Edge

회의자료

issue: 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023
Author: Martemucci, M.
Rummens, F.
Hirtzlin, T.
Martin, S.
Guille, O.
Januel, T.
Carabasse, C.
Billoint, O.
Laguerre, J.
Coignus, J.
Vincent, A. F.
Querlioz, D.
Grenouillet, L.
Saighi, S.
Vianello, E.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE)

Memory Window in Si:HfO2 FeRAM arrays: Performance Improvement and Extrapolation at Advanced Nodes

회의자료

issue: 2023 IEEE International Memory Workshop (IMW) Memory Workshop (IMW), 2023 IEEE International. :1-4 May, 2023
Author: Laguerre, J.
Bocquet, M.
Billoint, O.
Martin, S.
Coignus, J.
Carabasse, C.
Magis, T.
Dewolf, T.
Andrieu, F.
Grenouillet, L.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE)

Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited)

회의자료

issue: 2023 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2023 IEEE International. :1-8 Mar, 2023
Author: Grenouillet, L.
Barbot, J.
Laguerre, J.
Martin, S.
Carabasse, C.
Louro, M.
Bedjaoui, M.
Minoret, S.
Kerdiles, S.
Boixaderas, C.
Magis, T.
Jahan, C.
Andrieu, F.
Coignus, J.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE)

High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-kb HfO2: Si-Based 1T-1C FeRAM Arrays

학술저널

issue: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 69(4):2108-2114 Apr, 2022
Author: Francois, T.
Coignus, J.
Makosiej, A.
Giraud, B.
Carabasse, C.
Barbot, J.
Martin, S.
Castellani, N.
Magis, T.
Grampeix, H.
Van Duijn, S.
Mounet, C.
Chiquet, P.
Schroeder, U.
Slesazeck, S.
Mikolajick, T.
Nowak, E.
Bocquet, M.
Barrett, N.
Andrieu, F.
Grenouillet, L.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE) 등재 - SCOPUS 조회 - Impact Factor (JCR) 등재 - Web of Science (SCIE)

Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions

회의자료

issue: ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), ESSDERC 2021 - IEEE 51st European. :255-258 Sep, 2021
Author: Fontanini, R.
Barbot, J.
Segatto, M.
Lancaster, S.
Duong, Q.
Driussi, F.
Grenouillet, L.
Triozon, F.
Coignus, J.
Mikolajick, T.
Slesazeck, S.
Esseni, D.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE)

BEOL Integrated Ferroelectric HfO2 based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions

회의자료

issue: 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2022 6th IEEE. :67-69 Mar, 2022
Author: Alcala, R.
Materano, M.
Lomenzo, P.D.
Grenouillet, L.
Francois, T.
Coignus, J.
Vaxelaire, N.
Carabasse, C.
Chevalliez, S.
Andrieu, F.
Mikolajick, T.
Schroeder, U.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE)

Interplay Between Charge Trapping and Polarization Switching in BEOL-Compatible Bilayer Ferroelectric Tunnel Junctions

학술저널

issue: IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 10:593-599 2022
Author: Fontanini, R.
Barbot, J.
Segatto, M.
Lancaster, S.
Duong, Q.
Driussi, F.
Grenouillet, L.
Triozon, L.
Coignus, J.
Mikolajick, T.
Slesazeck, S.
Esseni, D.
DB Label: Database : IEEE Xplore Digital Library