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전체선택

Unified Charge Control Model for Back-Gated 2-D Field Effect Transistors

학술저널

issue: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(1):884-889 Jan, 2024
Author: Mounir, A.
Iniguez, B.
Lime, F.
Kloes, A.
Knobloch, T.
Grasser, T.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE) 등재 - SCOPUS 등재 - Web of Science (SCIE) 조회 - Impact Factor (JCR)

Cryogenic Temperature and Doping Analysis of Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs

학술저널

issue: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 69(3):1588-1595 Mar, 2022
Author: Yilmaz, K.
Iniguez, B.
Lime, F.
Kloes, A.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE) 등재 - SCOPUS 등재 - Web of Science (SCIE) 조회 - Impact Factor (JCR)

Quasi-Compact Model of Direct Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs by Wavelet Transform

학술저널

issue: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 69(1):17-24 Jan, 2022
Author: Yilmaz, K.
Iniguez, B.
Lime, F.
Kloes, A.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE) 등재 - SCOPUS 등재 - Web of Science (SCIE) 조회 - Impact Factor (JCR)

Compact DC and Quasi-Static Capacitances Modeling of a-Si:H TFTs, Including Parasitic Capacitances

학술저널

issue: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 68(7):3384-3389 Jul, 2021
Author: Lime, F.
Cerdeira, A.
Estrada, M.
Pashkovich, A.
Iniguez, B.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE) 등재 - SCOPUS 등재 - Web of Science (SCIE) 조회 - Impact Factor (JCR)

Equivalent DG Dimensions Concept for Compact Modeling of Short-Channel and Thin Body GAA MOSFETs Including Quantum Confinement

학술저널

issue: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 67(12):5381-5387 Dec, 2020
Author: Yilmaz, K.
Darbandy, G.
Reimbold, G.
Iniguez, B.
Lime, F.
Kloes, A.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE) 등재 - SCOPUS 등재 - Web of Science (SCIE) 조회 - Impact Factor (JCR)

A Complete Charge-Based Capacitance Model for IGZO TFTs

학술저널

issue: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 40(5):730-733 May, 2019
Author: Moldovan, O.
Castro-Carranza, A.
Estrada, M.
Cerdeira, A.
Lime, F.
Iniguez, B.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE) 등재 - SCOPUS 등재 - Web of Science (SCIE) 조회 - Impact Factor (JCR)

Compact modeling of intrinsic capacitances in Double-Gate Tunnel-FETs

회의자료

issue: 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) Ultimate Integration on Silicon (EUROSOI-ULIS), 2017 Joint International EUROSOI Workshop and International Conference on. :140-143 Apr, 2017
Author: Farokhnejad, A.
Graef, M.
Horst, F.
Liu, C.
Zhao, Q.T.
Iniguez, B.
Lime, F.
Kloes, A.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE)

A new analytical method for modeling a 2D electrostatic potential in MOS devices, applicable to compact modeling.

학술저널

issue: Journal of Applied Physics. 1/28/2024, Vol. 135 Issue 4, p1-7. 7p.
Author: Lime, F.¹ (AUTHOR) francois.lime@urv.cat
Iñiguez, B.¹ (AUTHOR)
Kloes, A.² (AUTHOR)
DB Label: Database : Academic Search Complete

원문보기: Full Text (AIP) 등재 - SCOPUS 등재 - Web of Science (SCIE) 조회 - Impact Factor (JCR)

Low frequency noise modeling of SOI MOSFETs using Green's function approach

회의자료

issue: 2011 21st International Conference on Noise and Fluctuations Noise and Fluctuations (ICNF), 2011 21st International Conference on. :348-351 Jun, 2011
Author: ElHusseini, J.
Martinez, F.
Armand, J.
Bawedin, M.
Valenza, M.
Pascal, F.
Ritzenthaler, R.
Lime, F.
Iniguez, B.
Faynot, Olivier
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE)

A surface potential based compact model for lightly doped FD SOI MOSFETs with ultra-thin body

회의자료

issue: Ulis 2011 Ultimate Integration on Silicon Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on. :1-4 Mar, 2011
Author: Husseini, J. El
Martinez, F.
Bawedin, M.
Valenza, M.
Ritzenthaler, R.
Lime, F.
Iniguez, B.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE)

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