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전체선택

Propelling Widespread GaN Electronics Adoption With Large Diameter and CMOS Fab-Friendly GaN-on-QST® Manufacturing Platform

회의자료

issue: 2024 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2024 IEEE International. :1-4 Dec, 2024
Author: Odnoblyudov, V.
Basceri, C.
Kurth, C.
Yamada, M.
Konishi, S.
Kawahara, M.
Liao, C.-C.
Shen, S.
Chiu, J.
Geens, K.
Vohra, A.
Bakeroot, B.
Decoutere, S.
Hahn, H.
Heuken, M.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE)

DLTFS Study of Monolithically Integrated GaN-on-Si Power Transistor for High Power Applications

회의자료

issue: 2024 15th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) Advanced Semiconductor Devices and Microsystems (ASDAM), 2024 15th International Conference on. :42-45 Oct, 2024
Author: Matus, M.
Marek, J.
Chvala, A.
Bakeroot, B.
Geens, K.
Stuchlikova, L.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE)

Monolithic 650-V Dual-Gate p-GaN Bidirectional Switch

학술저널

issue: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(11):6904-6909 Nov, 2024
Author: Baratella, G.
Chatterjee, U.
Syshchyk, O.
Borga, M.
Fabris, E.
Cosnier, T.
Bakeroot, B.
Decoutere, S.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE) 등재 - Web of Science (SCIE) 등재 - SCOPUS 조회 - Impact Factor (JCR)

Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping

학술저널

issue: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(10):5949-5955 Oct, 2024
Author: Alaei, M.
Borga, M.
Fabris, E.
Decoutere, S.
Lauwaert, J.
Bakeroot, B.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE) 등재 - Web of Science (SCIE) 등재 - SCOPUS 조회 - Impact Factor (JCR)

Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate

회의자료

issue: 2024 IEEE International Reliability Physics Symposium (IRPS) International Reliability Physics Symposium (IRPS), 2024 IEEE. :1-6 Apr, 2024
Author: Millesimo, M.
Fiegna, C.
Bakeroot, B.
Borga, M.
Posthuma, N.
Decoutere, S.
Sangiorgi, E.
Tallarico, A. N.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE)

Electrical Stability of MOS Structures With AlON and Al₂O₃ Dielectrics Deposited on n- and p-Type GaN

학술저널

issue: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(9):5212-5217 Sep, 2024
Author: Filho, W.G.
Borga, M.
Geens, K.
Khan, M.A.
Cingu, D.
Chatterjee, U.
Decoutere, S.
Knaepen, W.
Kizir, S.
Arnou, P.
Bakeroot, B.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE) 등재 - Web of Science (SCIE) 등재 - SCOPUS 조회 - Impact Factor (JCR)

Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile

학술저널

issue: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(8):4563-4569 Aug, 2024
Author: Alaei, M.
Borga, M.
Fabris, E.
Decoutere, S.
Lauwaert, J.
Bakeroot, B.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE) 등재 - Web of Science (SCIE) 등재 - SCOPUS 조회 - Impact Factor (JCR)

Toward Understanding the Failure Mechanism in p-GaN Gate HEMTs Operating in Reverse Conduction Diode Mode

학술저널

issue: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(8):4874-4878 Aug, 2024
Author: Lin, W.
Bakeroot, B.
Huang, Z.
Lo, T.
Borga, M.
Wellekens, D.
Posthuma, N.
Decoutere, S.
Wu, T.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE) 등재 - Web of Science (SCIE) 등재 - SCOPUS 조회 - Impact Factor (JCR)

1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates

학술저널

issue: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 45(4):657-660 Apr, 2024
Author: Kumar, S.
Geens, K.
Vohra, A.
Wellekens, D.
Cingu, D.
Fabris, E.
Cosnier, T.
Hahn, H.
Bakeroot, B.
Posthuma, N.
Langer, R.
Decoutere, S.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE) 등재 - Web of Science (SCIE) 등재 - SCOPUS 조회 - Impact Factor (JCR)

Route Toward Commercially Manufacturable Vertical GaN Devices

학술저널

issue: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(3):1488-1493 Mar, 2024
Author: Geens, K.
Borga, M.
Khan, M.A.
Filho, W.G.
Vohra, A.
Banerjee, S.
Lee, K.J.
Chatterjee, U.
Cingu, D.
Bakeroot, B.
Decoutere, S.
DB Label: Database : IEEE Xplore Digital Library

원문보기: Full Text (IEEE) 등재 - Web of Science (SCIE) 등재 - SCOPUS 조회 - Impact Factor (JCR)

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